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Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities

  • Published:2006 Issue:4 Volume:38 Page:444-447
  • ISSN:0142-2421
  • Container-title:Surface and Interface Analysis
  • language:en
  • Short-container-title:Surf. Interface Anal.

Author:

Pezoldt J.,Morales F. M.,Zgheib Ch.,Förster Ch.,Stauden Th.,Ecke G.,Wang Ch.,Masri P.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference12 articles.

1. , . In Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, (eds). IMPublications: Chichester, 2003; 619.

2. The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers

3. In Properties of Silicon Carbide, (ed.). INSPEC IEE: Exeter, 1995; 153.

4. Growth and Characterization of Three-Dimensional SiC Nanostructures on Si

5. The role of Ge predeposition temperature in the MBE epitaxy of SiC on Ssilicon

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2. 3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail;Critical Reviews in Solid State and Materials Sciences;2014-09-25

3. Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si;Journal of Computational and Theoretical Nanoscience;2012-11-01

4. Incorporation of group III, IV and V elements in 3C–SiC(111) layers grown by the vapour–liquid–solid mechanism;Journal of Crystal Growth;2010-11

5. Designing the Si(100) conversion into SiC(100) by Ge;physica status solidi (c);2010-02
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