Local compressive stress generation in electron irradiated boron-doped Si0.75 Ge0.25 /Si devices-Reference-Cited by-同舟云学术

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Local compressive stress generation in electron irradiated boron-doped Si0.75 Ge0.25 /Si devices

Published:2012-07-25 Issue:10-11 Volume:9 Page:2058-2061
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Tsunoda Isao,Nakashima Toshiyuki,Naka Nobuyuki,Idemoto Tatsuya,Yoneoka Masashi,Takakura Kenichiro,Yoshino Kenji,Gonzalez Mireia Bargallo,Simoen Eddy,Claeys Cor,Ohyama Hidenori

Funder

Inter-University Laboratory for the Joint Use of JAEA Facilities

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201200076/fullpdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Increased Radiation Hardness of Short-Channel Electron-Irradiated Si1-xGexSource/Drain p-Type Metal Oxide Semiconductor Field-Effect Transistors at Higher Ge Content;Japanese Journal of Applied Physics;2013-09-01

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