Structural characterization of in-situ silicided contacts textured on p-type [001] silicon-Reference-Cited by-同舟云学术

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Structural characterization of in-situ silicided contacts textured on p-type [001] silicon

Published:2013-11-25 Issue:1 Volume:11 Page:160-163
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Badalà Paolo,Faro Giuseppe,Marcellino Cinzia,Pellegrino Giovanna,Santangelo Antonello,Alberti Alessandra

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers;Solid State Phenomena;2024-08-22

2. Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing;Solid State Phenomena;2023-06-06

3. Structural and Electrical Characterization of Ni-Based Ohmic Contacts on 4H-SiC Formed by Solid-State Laser Annealing;Materials Science Forum;2022-05-31

4. Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing;Applied Surface Science;2021-02

5. Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact;Materialia;2020-03

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