Improvements of MOVPE grown (11$ \bar 2 $2) oriented GaN on pre-structured sapphire substrates using a SiNxinterlayer and HVPE overgrowth-Reference-Cited by-同舟云学术

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Improvements of MOVPE grown (11$ \bar 2 $2) oriented GaN on pre-structured sapphire substrates using a SiNxinterlayer and HVPE overgrowth

Published:2014-02 Issue:3-4 Volume:11 Page:525-529
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Caliebe Marian,Meisch Tobias,Neuschl Benjamin,Bauer Sebastian,Helbing Jeffrey,Beck Dominik,Thonke Klaus,Klein Martin,Heinz Dominik,Scholz Ferdinand

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Nucleation Layers on MOVPE Growth of Semipolar ($$11{\bar{2}}2$$) GaN on m-Plane Sapphire;Journal of Electronic Materials;2021-05-21

2. Performance-improved vertical GaN-based light-emitting diodes on Si substrates through designing the epitaxial structure;CrystEngComm;2018

3. Effect of nano‐porous SiN_x interlayer on propagation of extended defects in semipolar ‐orientated GaN;physica status solidi c;2017-03-06

4. Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample;Journal of Applied Physics;2017-02-21

5. Effect of HCl Chemical Reaction Etching on Thick Semipolar (11–22) GaN Growth by Hydride Vapor Phase Epitaxy;Journal of Nanoscience and Nanotechnology;2016-11-01

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