Thermoelectric properties and durability at elevated temperatures of impurity doped n-type Mg2 Si-Reference-Cited by-同舟云学术

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Thermoelectric properties and durability at elevated temperatures of impurity doped n-type Mg2 Si

Published:2013-11-25 Issue:12 Volume:10 Page:1857-1861
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Oto Y.,Iida T.,Sakamoto T.,Miyahara R.,Natsui A.,Nishio K.,Kogo Y.,Hirayama N.,Takanashi Y.

Funder

Grant-in-Aid for Research (A) by the Japanese Ministry of Education, Science, Sports, and Culture

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300353/fullpdf

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic band engineering of Mg₂Si by isoelectronic impurity doping: a first-principles study for enhancing thermoelectric properties;Japanese Journal of Applied Physics;2022-12-20

2. Recent Studies on the Environmentally Benign Alkaline-Earth Silicide Mg2Si for Middle-Temperature Thermoelectric Applications;Energies;2022-07-02

3. Enhanced Thermoelectric Performance of Vertical Bridgman-Grown Mg2Si by Codoping with Sb and Zn;Journal of Electronic Materials;2022-01-07

4. Enhancement of thermoelectric performance of Mg2Si via co-doping Sb and C by simultaneous tuning of electronic and thermal transport properties;Journal of Alloys and Compounds;2022-01

5. Silicide materials: Thermoelectric, mechanical properties, and durability for Mg-Si and Mn-Si;Thermoelectric Energy Conversion;2021

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