Quantitative analysis of carbon impurity concentration in silicon epitaxial layers by luminescence activation using carbon ion implantation and electron irradiation
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Extension of the scope of the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon;Japanese Journal of Applied Physics;2024-06-03
2. Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities;Applied Surface Science;2021-04
3. Simulation of infrared spectra of trace impurities in silicon wafers based on the multiple transmission–reflection infrared method;Scientific Reports;2021-01-13
4. Calibration curve for the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon;Japanese Journal of Applied Physics;2021-01-12
5. Free-to-bound emission from interstitial carbon and oxygen defects (CiOi) in electron-irradiated Si;Applied Physics Express;2021-01-01
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