Demonstration of wafer‐level white light emitting diode with 92,000 lm luminous flux-Reference-Cited by-同舟云学术

Demonstration of wafer‐level white light emitting diode with 92,000 lm luminous flux

Published:2017-02-22 Issue:8 Volume:14 Page:
ISSN:1862-6351
Container-title:physica status solidi c
language:en
Short-container-title:Phys. Status Solidi C

Author:

Zhang Yibin¹²,Xu Jianwei¹³,Zhao Desheng¹,Huang Hongjuan¹,Ding Mingdi¹³,Miao Zhenlin⁴,Wang Yanming⁴,He Peng⁴,Zhang Baoshun¹,Cai Yong¹

Affiliation:

1. Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano‐tech and Nano‐bionics Chinese Academy of Sciences 398 Ruo Shui Road Suzhou Industrial Park 215123 Suzhou P.R. China

2. University of the Chinese Academy of Sciences 100049 Beijing P.R. China

3. The Nano Science and Technology Institute USTC 215123 Suzhou P.R. China

4. Xiangeng HuaLei Optoelectronic Co. Ltd 423038 Chenzhou P.R. China

Abstract

A high‐power phosphor‐converted white wafer‐level LED with 92,000 lm was demonstrated. The high‐power white LED was manufactured by utilising a blue single wafer‐level LED chip coated with a 60‐µm‐thick thin film phosphor layer. The electrical and optical characteristics of the LED were measured. Results show that the luminous flux and luminous efficacy reach to 92,000 lm and ∼89 lm/W at an input electrical power of 1035 W, respectively. The view angle is about 133°.

Publisher

Wiley

Subject

Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201600244

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