Zinc-blende (cubic) GaN bulk crystals grown by molecular beam epitaxy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Pyramidal shape four V-grooved silicon substrate for enhancing cubic phase gallium nitride growth;Applied Physics Letters;2022-03-14
2. Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy;Applied Physics Letters;2021-07-19
3. Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11n) GaAs Substrates by AP-MOVPE: Comparative Study;Semiconductors;2020-06
4. High cubic phase purity and growth mechanism of cubic InN thin-films by Migration Enhanced Epitaxy;Thin Solid Films;2018-02
5. States of direct and indirect excitons in strained zinc-blende GaN/InGaN asymmetric quantum wells;Superlattices and Microstructures;2017-12
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