Temperature dependence of low‐frequency polarized Raman scattering spectra in TlInS 2
Author:
Affiliation:
1. Electronics and Computer EngineeringChiba Institute of TechnologyChibaJapan
2. Graduate School of EngineeringOsaka prefecture UniversityOsakaJapan
3. Institute of PhysicsAzerbaijan National Academy of SciencesBakuAzerbaijan
Publisher
Wiley
Subject
Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201600214
Reference24 articles.
1. Bonding and structure of gallium thallium selenide (GaTlSe2)
2. High-pressure Raman study of the ternary chalcogenides TlGaS2, TlGaSe2, TlInS2, and TlInSe2
3. Controlling Zeolitic Imidazolate Framework Nano- and Microcrystal Formation: Insight into Crystal Growth by Time-Resolved In Situ Static Light Scattering
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1. The first-principle study of substitutional impurities’ effect on elastic properties of TlInS2layered crystal;Low Temperature Physics;2022-01
2. Study of the influence of electronic radiation on the surface, structure and Raman spectrum of a TlInS2 single crystal;Physica B: Condensed Matter;2021-07
3. Temperature dependence of dielectric function spectra and interband optical transitions in layered TlInS2;Journal of Vacuum Science & Technology B;2019-11
4. Temperature Dependence of Raman-Active Modes of TlIn(0.95Se0.05)2 Single Crystals;Ukrainian Journal of Physics;2019-02-21
5. Low-temperature Raman studies of sulfur-rich TlIn(S 1− x Se x ) 2 single crystals;Vibrational Spectroscopy;2018-07
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