Effect of nano-column properties on self-separation of thick GaN layers grown by HVPE-Reference-Cited by-同舟云学术

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Effect of nano-column properties on self-separation of thick GaN layers grown by HVPE

Published:2014-01-24 Issue:3-4 Volume:11 Page:502-504
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Nikolaev V.,Golovatenko A.,Mynbaeva M.,Nikitina I.,Seredova N.,Pechnikov A.,Bougrov V.,Odnobludov M.

Funder

RFBR

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300432/fullpdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Estimation of point defects content in bulk GaN;Journal of Luminescence;2022-05

2. Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds;Semiconductors;2019-12

3. Critical thickness of GaN film in controllable stress-induced self-separation for preparing native GaN substrates;Materials & Design;2019-10

4. Separation of thick HVPE-GaN films from GaN templates using nanoporous GaN layers;Superlattices and Microstructures;2017-10

5. TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern;Journal of Crystal Growth;2016-07

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