Abstract
AbstractIn this paper, a proper noun “Region” is used for nm‐scale n‐type dopant‐rich region in p‐type Si crystal. Using this Region, certain solar cells have been assumed. By resonance absorption between photon energy and potential barrier of the Region, the cell can absorb most photons for visible light frequency without passing loss or thermal loss. This light absorption mechanism is different from conventional band gap absorption. Despite this benefit, output voltage is anticipated to decline according to the principle of detail balance. To control the decline, two methods are proposed in this paper. Theoretical energy conversion efficiencies for several cases are calculated with an ideal condition. The calculation result is over 70% as a theoretical value.
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