Investigation of Gold Doped Germanium in High Electric Fields-Reference-Cited by-同舟云学术

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Investigation of Gold Doped Germanium in High Electric Fields

Published:1966 Issue:1 Volume:14 Page:241-250
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Sondaevskii V. P.,Karakushan E. I.,Stafeev V. I.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Injection Breakdown in Iron-Doped Germanium Diodes

2. Candidate's Thesis, Fiz.-Tekh. Inst. Akad. Nauk SSSR, 1958.

3. and , Rep. 19th Conf. Phys. Electr., Massachusetts Institute of Technology, 1959 (p. 141).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Plasma and Current Instabilities in Semiconductors;1981

2. N‐type switching erroneously attributed to field‐enhanced trapping;Journal of Applied Physics;1977-07

3. N- and S-type negative resistances and relaxation oscillations in Au-doped double injection Ge diodes;physica status solidi (b);1968

4. Noise and oscillations in gold-doped germanium photodiodes;Solid-State Electronics;1967-02

5. Contribution to the Determination of Gold Centre Cross Sections in Single-Crystal Germanium by Double Injection Experiments;physica status solidi (b);1967

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