Sur la structure de bandes des alliages HgTe-CdTe I. Mesures électriques-Reference-Cited by-同舟云学术

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Sur la structure de bandes des alliages HgTe-CdTe I. Mesures électriques

Published:1966 Issue:2 Volume:17 Page:889-901
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Verié C.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Preparation and properties of HgTe and mixed crystals of HgTe-CdTe

2. et , C. R. Congrès Internat. Phys. Semicond., Paris 1964 (p. 41).

3. , , et , Proc. Internat. Conf. Phys. Semicond., Exeter 1962 (p. 703).

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3. Three-Band Model Applied to Narrow-Gap HgCdTe;physica status solidi (b);1984-10-01

4. Quantum efficiency of internal photoeffects in narrow‐gap semiconductors. II. Calculation results in comparison with experimental data;Journal of Applied Physics;1984-03-15

5. Defect chemistry and intrinsic carrier concentration for Hg1−x Cdx Te(s) for x = 0.20, 0.40, and 1.0;Journal of Electronic Materials;1983-09

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