The Dependence of Cd Diffusion and Electrical Conductivity in CdS on Cd Partial Pressure and Temperature-Reference-Cited by-同舟云学术

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The Dependence of Cd Diffusion and Electrical Conductivity in CdS on Cd Partial Pressure and Temperature

Published:1969 Issue:2 Volume:36 Page:705-716
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Shaw D.,Whelan R. C.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. II-VI Semiconducting Compounds, Ed. Benjamin, New York 1967 (p. 244).

2. and , II-VI Semiconducting Compounds, p. 451.

3. Self-diffusion of cadmium and tellurium in cadmium telluride

4. Ph.D. Thesis, Stanford University, 1965.

5. , and , II-VI Semiconducting Compounds, Ed. Benjamin, New York 1967 (p. 439).

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS;Materials Science Forum;1997-12

2. Self-diffusion of cadmium into cadmium sulphide;Journal of Crystal Growth;1989-06

3. Laser photosublimation of compound semiconductors;Journal of Materials Research;1987-04

4. The self-diffusion of Cd in CdS;Journal of Physics C: Solid State Physics;1984-09-30

5. High-temperature conductivity relaxation in undoped CdS and CdSe single crystals;Journal of Solid State Chemistry;1982-07

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