Affiliation:
1. Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems School of Microelectronics Science and Technology Sun Yat‐sen University Zhuhai 519082 China
2. Songshan Lake Materials Laboratory Dongguan 523808 China
3. Key Laboratory of Material Simulation Methods and Software of Ministry of Education College of Physics Jilin University Changchun 130012 China
4. School of Automation and Information Engineering Xi'an University of Technology Xi'an 710048 P. R. China
5. State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronics School of Physics Peking University Beijing 100871 China
Abstract
AbstractPolarization‐sensitive broadband optoelectronic detection is crucial for future sensing, imaging, and communication technologies. Narrow bandgap 2D materials, such as Te and PdSe2, show promise for these applications, yet their polarization performance is limited by inherent structural anisotropies. In this work, a self‐powered, broadband photodetector utilizing a Te/PdSe2 van der Waals (vdWs) heterojunction, with orientations meticulously tailored is introduced through polarized Raman optical spectra and tensor calculations to enhance linear polarization sensitivity. The device exhibits anisotropy ratios of 1.48 at 405 nm, 3.56 at 1550 nm, and 1.62 at 4 µm, surpassing previously‐reported photodetectors based on pristine Te and PdSe2. Additionally, it exhibits high responsivity (617 mA W−1 at 1550 nm), specific detectivity (5.27 × 1010 Jones), fast response (≈4.5 µs), and an extended spectral range beyond 4 µm. The findings highlight the significance of orientation‐engineered heterostructures in enhancing polarization‐sensitive photodetectors and advancing optoelectronic technology.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Cited by
4 articles.
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