General Synthesis of Metal Indium Sulfide Atomic Layers for Photocatalysis

Abstract

AbstractThe metal indium sulfides have attracted extensive research interest in photocatalysis due to regulable atomic configuration and excellent optoelectronic properties. However, the synthesis of metal indium sulfide atomic layers is still challenging since intrinsic non‐van‐der‐Waals layered structures of some components. Here, a surfactant self‐assembly growth mechanism is proposed to controllably synthesize metal indium sulfide atomic layers. Eleven types of atomic layers with tunable compositions, thickness, and defect concentrations are successfully achieved namely In2S3, MgIn2S4, CaIn2S4, MnIn2S4, FeIn2S4, ZnIn2S4, Zn2In2S5, Zn4In16S33, CuInS2, CuIn5S8, and CdIn2S4. The typical CaIn2S4 shows a defect‐dependence activity for CO2 photoreduction. The designed S vacancies in CaIn2S4 can serve as catalytic centers to activate CO2 molecules via localized electrons for π‐back‐donation. The engineered S vacancies tune the non‐covalent interaction with CO2 and intermediates, manages to tune the free energy, and lower the reaction energy barrier. As a result, the defect‐rich CaIn2S4 displays 2.82× improved reduction rate than defect‐poor CaIn2S4. Meantime, other components also display promising photocatalytic performance, such as Zn2In2S5 with a H2O2 photosynthesis rate of 292 µmol g−1 h−1 and CuInS2 with N2−NH4+ conversion rate of 54 µmol g−1 h−1. This work paves the way for the multidisciplinary exploration of metal indium sulfide atomic layers with unique photocatalysis properties.