A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

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A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

Published:2022-01-27 Issue:12 Volume:18 Page:2106253
ISSN:1613-6810
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language:en
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Author:

Mao Jing‐Yu¹²,Wu Shuang¹,Ding Guanglong¹,Wang Zhan‐Peng¹,Qian Fang‐Sheng¹,Yang Jia‐Qin³,Zhou Ye¹,Han Su‐Ting³^ORCID

Affiliation:

1. Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China

2. Department of Physics National University of Singapore Singapore 117542 Singapore

3. Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202106253

Reference64 articles.

1. Fully memristive neural networks for pattern classification with unsupervised learning

2. Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride

3. Field-Effect Transistors Built from All Two-Dimensional Material Components

4. Ultrathin Two-Dimensional Nanomaterials

5. Robust memristors based on layered two-dimensional materials

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