Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe 2 Using Electron Energy‐Loss Spectroscopy in the Scanning Transmission Electron Microscope-Reference-Cited by-同舟云学术

Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe 2 Using Electron Energy‐Loss Spectroscopy in the Scanning Transmission Electron Microscope

Published:2019-08-05 Issue:35 Volume:9 Page:1901612
ISSN:1614-6832
Container-title:Advanced Energy Materials
language:en
Short-container-title:Adv. Energy Mater.

Author:

Deitz Julia I.¹^ORCID,Paul Pran K.²,Farshchi Rouin³,Poplavskyy Dmitry³,Bailey Jeff³,Arehart Aaron R.²,McComb David W.¹,Grassman Tyler J.¹²^ORCID

Affiliation:

1. Department of Materials Science and EngineeringThe Ohio State University Columbus 43210 OH USA

2. Department of Electrical and Computer EngineeringThe Ohio State University Columbus 43210 OH USA

3. MiaSolé Hi‐Tech Corp. Santa Clara 95051 CA USA

Funder

Office of Energy Efficiency and Renewable Energy

Publisher

Wiley

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aenm.201901612

Reference44 articles.

1. Studies of Hot-Electron Degradation in GaN HEMTs with Varying Gate Recess Depths

2. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

3. Effects of RF and DC stress on AlGaN/GaN MODFETs: a low-frequency noise-based investigation

4. Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs

5. The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

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