Analysis of RF scattering parameters and noise and power performances of RF-power MOS in 0.15-?m RF cmos technology for RF SOC applications-Reference-Cited by-同舟云学术

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Analysis of RF scattering parameters and noise and power performances of RF-power MOS in 0.15-?m RF cmos technology for RF SOC applications

Published:2004 Issue:3 Volume:41 Page:191-196
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Lin Yo-Sheng

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. CMOS RF integrated circuits at 5 GHz and beyond

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2. Analysis and modeling of the kink effect in S22 based on support vector machine for GaN HEMTs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-02-17

3. Thermal influence on S22 kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications;Semiconductor Science and Technology;2019-01-29

4. Empowering GaN HEMT models: The gateway for power amplifier design;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2015-11-25

5. An Extensive Experimental Analysis of the Kink Effects in ${ S}_{22}$ and ${ h}_{21}$ for a GaN HEMT;IEEE Transactions on Microwave Theory and Techniques;2014-03

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