9‐1: Fabrication of Lateral Crystal Si on Cu Bottom‐Gate Structure via Blue‐Laser Diode Annealing (BLDA)-Reference-Cited by-同舟云学术

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9‐1: Fabrication of Lateral Crystal Si on Cu Bottom‐Gate Structure via Blue‐Laser Diode Annealing (BLDA)

Published:2021-05 Issue:1 Volume:52 Page:96-98
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Toriyama Seiya¹,Kosugi Junichi¹,Kosuge Takanori¹,Saito Kaori¹,Sawai, Takuya¹,Yingbao Yang¹,Sasaki Nobuo¹,Gotoh Jun¹,Sugimoto Shigeto¹

Affiliation:

1. V Technology Co., Ltd. 134 Godo-cho Hodogaya-ku Yokohama Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14619

Reference6 articles.

1. Polysilicon TFT Technology for Active Matrix OLED Displays;Stewart M.;IEEE Trans. Electron Devices,2001

2. An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fablicating Microcrystalline-Si TFTs;Morimoto K.;IEICE Trans. Electron., E94-C,2011

3. Micro Silicon Technology for Active Matrix OLED Display;Arai T.;SID 07 Digest of Technical Papers,2007

4. Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing;Noguchi T.;Jap. J. Appl. Phys,2010

5. Blue-Diode Laser Annealing of Amorphous Silicon Films for Low-Cost, Large-Scale Manufacturing of Advanced Displays;Park M.;SID Symposium Digest of Technical Papers,2018

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