High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells-Reference-Cited by-同舟云学术

High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells

Published:2016-08-25 Issue:11 Volume:24 Page:1436-1447
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

El-Huni Walid¹,Migan Anne¹,Djebbour Zakaria¹²,Salvestrini Jean-Paul³⁴,Ougazzaden Abdallah⁵⁶

Affiliation:

1. GeePs, UMR CNRS 8507, CentraleSupélec; Univ. Paris-Sud, Université Paris-Saclay, Sorbonne Universités, UPMC Univ Paris 06; 3 & 11 rue Joliot-Curie, Plateau de Moulon 91192 Gif-sur-Yvette CEDEX France

2. Université de Versailles Saint Quentin; Département des Sciences Physiques; 45 Avenue des Etats Unis 78035 Versailles France

3. LMOPS; Université de Lorraine; EA4423, 2 Rue E. Belin 57070 Metz France

4. LMOPS; CentraleSupélec; EA4423, 2 Rue E. Belin 57070 Metz France

5. UMI 2958; Georgia Tech-CNRS; 57070 Metz France

6. Georgia Institute of Technology; School of Electrical and Computer Engineering; GT-Lorraine 57070 Metz France

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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