Thermal Stability of Sheet Resistance in AlGaN/GaN 2DEG Structure
Author:
Affiliation:
1. NTT Corporation, NTT Photonics Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa 243‐0198, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390071
Reference6 articles.
1. H.Morkoç Nitride Semiconductors and Devices Springer 1999 (p. 257).
2. Low resistance ohmic contacts on wide band‐gap GaN
3. Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al0.1Ga0.9N/GaN Double Heterostructure
4. Optical constants of epitaxial AlGaN films and their temperature dependence
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