Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference6 articles.
1. Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy
2. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
3. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method with Subpicosecond Pulsed Laser
4. Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells
5. Giant ambipolar diffusion constant of n-i-p-i doping superlattices
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Micro-pixel light emitting diodes: Impact of the chip process on microscopic electro- and photoluminescence;Applied Physics Letters;2015-04-13
2. Lateral diffusion of photogenerated carriers in InGaN/GaN heterostructures observed by PL measurements;physica status solidi (c);2007-06
3. Measurement of the internal quantum efficiency of InGaN quantum wells;Light-Emitting Diodes: Research, Manufacturing, and Applications XI;2007-02-08
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