Properties of Ga2O3-based (InxGa1-x)2O3alloy thin films grown by molecular beam epitaxy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference18 articles.
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4. Influence of postdeposition annealing on the properties of Ga2O3 films on SiO2 substrates
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1. Crystallographic and band structure analysis of β-(AlxGa1−x)2O3/β-(InyGa1−y)2O3 thin film grown on β-Ga2O3 substrate via mist CVD;AIP Advances;2024-04-01
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