In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)-Reference-Cited by-同舟云学术

In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)

Published:2008-05 Issue:6 Volume:5 Page:2010-2012
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Germain M.,Cheng K.,Derluyn J.,Degroote S.,Das J.,Lorenz A.,Marcon D.,Hove M. Van,Leys M.,Borghs G.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference9 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

3. AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

4. , , , , et al., IEDM Technical Digest, IEEE International, 2005.

5. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

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