Interplay of impurity segregation and lattice mismatch in molecular beam epitaxy of III′-III″-V compounds plus dopant: application to the InGaAs:Sn nanoheterolayer growth
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Published:2008-07
Issue:9
Volume:5
Page:2760-2762
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ISSN:1610-1634
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Container-title:physica status solidi (c)
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language:en
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Short-container-title:phys. stat. sol. (c)
Author:
Chikalova-Luzina O.
Subject
Condensed Matter Physics