Lattice Location of Implanted 147 Nd and 147* Pm in GaN Using Emission Channeling
Author:
Affiliation:
1. Instituut voor Kern‐ en Stralingsfysica, K.U. Leuven, Celestijnenlaan 200 D, 3001 Leuven, Belgium
2. Instituto Tecnológico e Nuclear, Estrada Nacional 10, 2685 Sacavém, Portugal
3. CERN‐PPE, 1211 Geneva 23, Switzerland
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390086
Reference8 articles.
1. Electroluminescence from erbium and oxygen coimplanted GaN
2. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
3. Photoluminescence and photoluminescence excitation spectroscopy of multipleNd3+sites in Nd-implanted GaN
4. Emission channeling and blocking
5. Electron emission channeling with position-sensitive detectors
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