573 K operation AlGaN/GaN HFET with enhancement operation on Si substrate
Author:
Affiliation:
1. Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2‐4‐3 Okano, Nishi‐ku, Yokohama, 220‐0073 Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461302
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?;Journal of Crystal Growth;2009-06
2. Normally-off GaN-MISFET with well-controlled threshold voltage;physica status solidi (a);2007-06
3. Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD;Journal of Crystal Growth;2007-01
4. Electronic Devices;Wide Bandgap Semiconductors;2007
5. Investigation of buffer structures for the growth of a high quality AlGaN/GaN hetero-structure with a high power operation FET on Si substrate using MOCVD;physica status solidi (a);2006-05
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