An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/ β-Ga2O3 HEMT;Transactions on Electrical and Electronic Materials;2023-08-01
2. Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d = 12 V;IEEE Electron Device Letters;2023-04
3. Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications;Materials;2021-11-01
4. Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact;Journal of the Korean Physical Society;2020-05
5. A Rigorous Investigation of Electrostatic and Transport Phenomena of GaN Double-Channel HEMT;IEEE Transactions on Electron Devices;2019-07
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