Synthesis of rare-earth activated AlN and GaN powders via a three-step conversion process-Reference-Cited by-同舟云学术

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Synthesis of rare-earth activated AlN and GaN powders via a three-step conversion process

Published:2008-05 Issue:6 Volume:5 Page:1889-1891
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Tao Jonathan H.,Perea-Lopez Nestor,McKittrick Joanna,Talbot Jan B.,Klinedinst Keith,Raukas Madis,Laski Joseph,Mishra Kailash C.,Hirata Gustavo

Publisher

Wiley

Subject

Condensed Matter Physics

Reference13 articles.

1. Light-emitting Diodes (Cambridge University Press, New York, 2006), chap. 1.

2. Multiple color capability from rare earth-doped gallium nitride

3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

4. The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates

5. Deposition of III-N thin films by molecular beam epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rare earth 4f hybridization with the GaN valence band;Semiconductor Science and Technology;2012-10-16

2. Resonant photoemission of rare earth doped GaN thin films;The European Physical Journal Applied Physics;2011-09-28

3. Schottky barrier formation at the Au to rare earth doped GaN thin film interface;The European Physical Journal Applied Physics;2011-08-18

4. The effective surface Debye temperature of Yb:GaN;Materials Letters;2011-05

5. Crystal field and Zeeman parameters of substitutional Yb3+ ion in GaN;Journal of Alloys and Compounds;2010-04

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