Structural and optical characterization of GaSb layers on Si (001) substrates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference7 articles.
1. Molecular‐beam epitaxy of GaSb/AlSb optical device layers on Si(100)
2. High-Quality GaSb/AlGaSb Quantum Well Grown on Si Substrate
3. MBE growth and characterization of GaAs1−xSbx epitaxial layers on Si (001) substrates
4. Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer
5. Growth mechanisms of highly mismatched AlSb on a Si substrate
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1. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique;East European Journal of Physics;2023-09-04
2. Growth of low defect AlGaSb films on Si (100) using AlSb and InSb quantum dots intermediate layers;Journal of Crystal Growth;2011-05
3. Structural and Optical Properties of GaSb Films Grown on AlSb/Si (100) by Insertion of a Thin GaSb Interlayer Grown at a Low Temperature;Journal of the Korean Physical Society;2010-07-15
4. Strong photoluminescence at 1.53 μm from GaSb/AlGaSb multiple quantum wells grown on Si substrate;Applied Physics Letters;2009-08-10
5. Growth and characterization of GaSb heteroepitaxial layers on Si(111) substrates;physica status solidi (c);2008-07
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