Schottky junctions on n‐type InP for zero bias microwave detectors-Reference-Cited by-同舟云学术

Schottky junctions on n‐type InP for zero bias microwave detectors

Published:2003-02 Issue:3 Volume: Page:916-921
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Horváth Zs. J.¹,Rakovics V.¹,Szentpáli B.¹,Püspöki S.¹

Affiliation:

1. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest 114, P.O. Box 49, 1525 Budapest, Hungary

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306225

Reference20 articles.

1. Zs. J.Horváth D.Donoval G.Pető G.Molnár andVoVan Tuyenin: Proc. Third Int. EuroConf. on Advanced Semiconductor Devices and Microsystems ASDAM 2000 Smolenice Castle Slovakia 2000 (Institute of Electrical and Electronics Engineers Inc. Danvers USA 2000) p. 39.

2. Modification of Al/Si interface and Schottky barrier height with chemical treatment

3. Schottky barriers on atomically clean n-InP (110)

4. Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process

5. Fermi Level Pinning and Schottky Barrier Height Control at Metal-Semiconductor Interfaces of InP and Related Materials

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