Tuning of the alloy composition of Zn 1− x Cd x Se quantum wells by submonolayer pulsed beam epitaxy (SPBE)
Author:
Affiliation:
1. Physics Department, CINVESTAV, Apdo. Postal 14‐740, 07000 Mexico, DF, Mexico
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304299
Reference11 articles.
1. Migration enhanced epitaxy and optical properties of ZnSe/CdSe digital alloy quantum wells
2. Comparative study of molecular beam and migration-enhanced epitaxy of ZnCdSe quantum wells: influence on interface and composition fluctuations
3. Investigation of the epitaxial growth mechanism of ZnTe on (001) CdTe
4. Interplay of kinetics and thermodynamics in molecular beam epitaxy of (Mg,Zn,Cd)(S,Se)
5. INTERACTION BETWEEN Zn AND Cd ATOMS DURING THE ATOMIC LAYER EPITAXY GROWTH OF CdZnTe/ZnTe QUANTUM WELLS
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1. Observation of a non-constant Cd diffusion coefficient during the thermal annealing of Zn1-Cd Se quantum wells;Journal of Alloys and Compounds;2020-12
2. Layer-by-Layer Growth of Thin Films of Ternary Alloys of II–VI Semiconductors by Submonolayer Pulsed Beam Epitaxy (SPBE);Molecular Beam Epitaxy;2018
3. Growth of HfO2/TiO2nanolaminates by atomic layer deposition and HfO2-TiO2by atomic partial layer deposition;Journal of Applied Physics;2017-02-14
4. Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers;AIP Conference Proceedings;2014
5. Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors;Molecular Beam Epitaxy;2013
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