Optical cavity formation on GaN using a conventional RIE system
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference5 articles.
1. Cl[sub 2]-based dry etching of GaN films under inductively coupled plasma conditions
2. Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures
3. Depth and thermal stability of dry etch damage in GaN Schottky diodes
4. Laser cavity mirror imperfections and reflectivity: A time‐dependent numerical approach
5. Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications;Microelectronic Engineering;2012-02
2. Resonantly enhanced selective photochemical etching of GaN;Applied Physics Letters;2009-04-27
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