Effects of the high-energy proton irradiation on the properties of GaN ionizing radiation detectors-Reference-Cited by-同舟云学术

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Effects of the high-energy proton irradiation on the properties of GaN ionizing radiation detectors

Published:2008-07 Issue:9 Volume:5 Page:3029-3031
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kažukauskas V.,Kalendra V.,Jasiulionis R.,Vaitkus J.-V.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference6 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Semiconductor ultraviolet detectors

3. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

4. Influence of irradiation by 24 GeV protons on the properties of 4H–SiC radiation detectors

5. Thermally stimulated currents in semi-insulating GaAs Schottky diodes and their simulation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of 5 MeV proton-irradiated gallium nitride nanowires;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

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