Growth of M -plane (10-10) InN on LiAlO2 (100) substrate
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of the Effect of Oxygen on the Near-Surface Electron Accumulation in Nonpolarm-Plane (101̄0) InN Film by Hard X-ray Photoelectron Spectroscopy;Japanese Journal of Applied Physics;2013-08-01
2. Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(101¯3) crystal on GaAs(110) by MOVPE;Journal of Crystal Growth;2013-03
3. Molecular beam epitaxy of low-bandgap InGaN;Molecular Beam Epitaxy;2013
4. The growth and properties of an m-plane InN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition;Science China Physics, Mechanics and Astronomy;2012-05-19
5. Semi-polar InN(10$ \bar 1 $3) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas;physica status solidi (c);2011-04-21
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