Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference14 articles.
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4. A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate
5. Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy
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