In situ optical monitoring of the interface strain relaxation of InGaAs/GaAs grown by molecular‐beam epitaxy-Reference-Cited by-同舟云学术

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In situ optical monitoring of the interface strain relaxation of InGaAs/GaAs grown by molecular‐beam epitaxy

Published:2003-12 Issue:8 Volume: Page:3017-3021
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Medel‐Ruiz C.I.¹,Lastras‐Martínez A.¹,Balderas‐Navarro R. E.¹²

Affiliation:

1. Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, S.L.P., México

2. Facultad de Ciencias, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, S.L.P., México

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303862

Reference16 articles.

1. 1.3 μm room-temperature GaAs-based quantum-dot laser

2. Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length

3. Spontaneous ordering of nanostructures on crystal surfaces

4. Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers

5. Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors

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