Physical model for the transient response of a voltage‐tunable optoelectronic integrated functional device-Reference-Cited by-同舟云学术

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Physical model for the transient response of a voltage‐tunable optoelectronic integrated functional device

Published:2003-02 Issue:3 Volume: Page:961-966
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Sheikhi M. H.¹²,Ahmadi Vahid³⁴,Morravej‐Farshi M. K.³,Yao T.²

Affiliation:

1. Department of Electrical Engineering, Shiraz University, P.O. Box: 71345‐1457, Shiraz, Iran

2. Institute for Material Research, Tohoku University, Sendai 980‐8577, Japan

3. Department of Electrical Engineering, Tarbiat Modares University, P.O. Box 14115‐143, Tehran, Iran

4. Semiconductor Group, Laser Research Center, AEOI, Tehran, Iran

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306250

Reference11 articles.

1. Light-to-light transducers with amplification

2. Optical feedback in offset-structure optoelectronic integrated devices

3. Integration of InGaAsP/InP optoelectronic bistable switches with a function of optical erasing

4. V.AhmadoandM. H.Sheikhi 8th IEEE EDMO (IEEE Scotland UK 2000) p. 152.

5. Numerical analysis for static and dynamic characteristics of an optical amplifier-switch integrated device

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and numerical analysis of a polarization-insensitive quantum well optoelectronic integrated amplifier-switch;Solid-State Electronics;2009-03

2. Analysis for the characteristics of a voltage tunable functional quantum structure optoelectronic integrated device;SPIE Proceedings;2008-03-03

3. Numerical analysis of an optoelectronic integrated device composed of coupled periodic MQW phototransistor and strained-QW laser diode;Solid-State Electronics;2006-03

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