Comparison of high quality GaN-based light-emitting diodes grown on alumina-rich spinel and sapphire substrates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference14 articles.
1. Substrates for gallium nitride epitaxy
2. High‐quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl2O4 substrate
3. US Patent No. 5, 850, 410 (1998).
4. Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition
5. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates
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4. Structure, thermal expansion and optical property of alumina-rich spinel substrate;Journal of Alloys and Compounds;2009-06
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