Benefits of negative polarization charge inn-InGaN onp-GaN single heterostructure light emitting diode withp-side down
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference15 articles.
1. The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure
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4. High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolarm-plane Bulk GaN Substrate
5. Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells
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3. Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy;physica status solidi (c);2015-03-18
4. GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN;Solid-State Electronics;2015-01
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