Electrical characterization of InAs thin films
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference15 articles.
1. Electrical and magneto-optical of MBE InAs on GaAs
2. High mobility InAs grown on GaAs substrates using tertiarybutylarsine and trimethylindium
3. Thickness-dependent electron accumulation in InAs thin films onGaAs(111)A: A scanning-tunneling-spectroscopy study
4. Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)
5. Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Phonon characteristics of Si‐doped InAs grown by gas‐source molecular beam epitaxy;Journal of Raman Spectroscopy;2019-07-31
2. Activation of Si implants into InAs characterized by Raman scattering;Journal of Applied Physics;2016-03-07
3. Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors;Nanoscale;2013
4. Electrical characteristics of cadmium doped InAs grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;2012-01-15
5. Nanoepitaxy of InAs on Geometric Patterned Si (001);ECS Journal of Solid State Science and Technology;2012
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3