Effects of sapphire substrate misorientation on the GaN-based light emitting diode grown by metalorganic vapour phase epitaxy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference8 articles.
1. , and , The Blue Laser Diode (Springer, New York, 2000).
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. GaN Growth Using GaN Buffer Layer
4. Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition
5. Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers
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