Spectral and time resolved scanning near-field microscopy of broad area 405 nm InGaN laser diode dynamics-Reference-Cited by-同舟云学术

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Spectral and time resolved scanning near-field microscopy of broad area 405 nm InGaN laser diode dynamics

Published:2008-05 Issue:6 Volume:5 Page:2073-2076
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Braun Harald,Meyer Tobias,Scholz Dominik,Schwarz Ulrich T.,Brüninghoff Stefanie,Lell Alfred,Strauß Uwe

Publisher

Wiley

Subject

Condensed Matter Physics

Reference15 articles.

1. InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode

2. Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

3. Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

4. Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers

5. Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation;IEEE Journal of Quantum Electronics;2015-08

2. Fast self-heating in GaN-based laser diodes;Applied Physics Letters;2011-05-02

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