Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon-Reference-Cited by-同舟云学术

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Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon

Published:2003-04 Issue:35 Volume:38 Page:394-398
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:
Short-container-title:Cryst. Res. Technol.

Author:

Emtsev V. V.,Ammerlaan C. A. J.,Emtsev V. V.,Oganesyan G. A.,Misiuk A.,Surma B.,Bukowski A.,Londos C. A.,Potsidi M. S.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of activation energy of technological thermodonors in uniaxially deformed n−Si;Physica B: Condensed Matter;2023-12

2. Peculiarities of changes in the structure and electrophysical characteristics of n-Si under the effect of various thermal treatment regimes;Reports of the National Academy of Sciences of Ukraine;2020-06

3. Near-interfacial thermal donor generation during processing of (100)Si/low-κSi-oxycarbide insulator structures revealed by electron spin resonance;Semiconductor Science and Technology;2014-08-01

4. Electrical properties of thermal donors formed in silicon under elastic tensile stress;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2009-12

5. Design and fabrication of a single crystal silicon (SCSi) telescope: a success story;SPIE Proceedings;2007-09-13

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