Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference10 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Energy gap and optical properties of InxGa1xN
3. Absorption and Raman scattering processes in InN films and dots
4. Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy;Journal of Crystal Growth;2008-11
2. In-Situ Monitoring for Nano-Structure Growth in MOVPE;Semiconductor Nanostructures;2008
3. InN growth on sapphire using different nitridation procedures;physica status solidi (a);2006-05
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