Voltage‐controlled attenuator based on PIN diode and compensated gold wire inductors-Reference-Cited by-同舟云学术

Voltage‐controlled attenuator based on PIN diode and compensated gold wire inductors

Published:2024-08 Issue:8 Volume:66 Page:
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Micro & Optical Tech Letters

Author:

Chen Jiming¹,Peng Hao²,Chen Lifeng³,Sun Tianyang²,Liu Yu²,Tatu Serioja Ovidiu⁴,Yang Tao²

Affiliation:

1. Department of Design of Integrated Circuit and Integrated System, School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics) University of Electronic Science and Technology of China Chengdu China

2. Department of Circuit and System, School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu China

3. Department of Precision Instrument, School of Mechanical Engineering Tsinghua University Beijing China

4. Département des Télécommunications Institut National de la Recherche Scientifique, Énergie Matériaux et Télécommunications Montréal Canada

Abstract

AbstractThis paper proposes an innovative design approach for a voltage‐controlled (variable) attenuator that allows continuous control of attenuation through analog voltage. Different from fixed attenuators, this work employs PIN diodes and compensated gold wire inductors to configure the attenuation network. It is based in imperfect matching theory, ensuring to obtain the acceptable S‐parameters over the operating band. Measurement results demonstrate effective performance of the attenuator within the voltage range of 0.7–1.03 V. Return losses of the attenuator are all better than 15 dB in the operating range of 10.5–19 GHz. The insertion losses exhibit continuous variation from 2 to 15 dB, requiring only a single controlled voltage to adjust the attenuation value.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mop.34295

Reference12 articles.

1. Analysis of Loaded Substrate Integrated Waveguides and Attenuators

2. LucianiG BornemannJ. Half‐mode SIW variable PIN diode attenuator. In:2019 13th European Conference on Antennas and Propagation (EuCAP). IEEE;2019:1‐5.

3. Ring-hybrid microwave voltage-variable attenuator using HFET transistors

4. ShireeshaC SadhuR HarikumarR. X‐band voltage variable attenuators using PIN diodes. In:2014 IEEE International Microwave and RF Conference (IMaRC). IEEE;2014:323‐326.

5. MannS LurzF LindnerS et al. 61 GHz millimeter wave voltage variable attenuator based on flip‐chip mounted PIN‐diodes. In:2014 20th International Conference on Microwaves Radar and Wireless Communications (MIKON). IEEE;2014.