Controlled Layer Thinning and p-Type Doping of WSe2 by Vapor XeF2-Reference-Cited by-同舟云学术

Controlled Layer Thinning and p-Type Doping of WSe2 by Vapor XeF2

Published:2017-09-13 Issue:41 Volume:27 Page:1702455
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhang Rui¹^ORCID,Drysdale Daniel²,Koutsos Vasileios³^ORCID,Cheung Rebecca¹

Affiliation:

1. Scottish Microelectronics Centre; Institute for Integrated Micro and Nano Systems; School of Engineering; The University of Edinburgh; Edinburgh EH9 3FF UK

2. memsstar Ltd; Scottish Microelectronics Centre; Edinburgh EH9 3FF UK

3. Institute for Materials and Processes; School of Engineering; The University of Edinburgh; Edinburgh EH9 3FB UK

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference118 articles.

1. Silicon Device Scaling to the Sub-10-nm Regime

2. Single-layer MoS2 transistors

3. MoS 2 transistors with 1-nanometer gate lengths

4. Stretching and Breaking of Ultrathin MoS2

5. Elastic properties of suspended multilayer WSe2

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