Doped Organic Semiconductors: Trap-Filling, Impurity Saturation, and Reserve Regimes-Reference-Cited by-同舟云学术

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Doped Organic Semiconductors: Trap-Filling, Impurity Saturation, and Reserve Regimes

Published:2015-03-26 Issue:18 Volume:25 Page:2701-2707
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Tietze Max L.¹,Pahner Paul¹,Schmidt Kathleen¹,Leo Karl¹,Lüssem Björn¹

Affiliation:

1. Institut für Angewandte Photophysik; Technische Universität Dresden; George-Bähr-Straße 1 01069 Dresden Germany

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201404549/fullpdf

Reference29 articles.

1. Highly Efficient Organic Devices Based on Electrically Doped Transport Layers

2. Doping of organic semiconductors

3. Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)

4. Photoelectron spectroscopy study of systematically varied doping concentrations in an organic semiconductor layer using a molecular p-dopant

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