Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory-Reference-Cited by-同舟云学术

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Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory

Published:2015-10-15 Issue:43 Volume:25 Page:6710-6715
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kim Sung Kyu¹,Kim Jong Yoon²,Choi Sung-Yool²,Lee Jeong Yong¹³,Jeong Hu Young⁴

Affiliation:

1. Department of Materials Science and Engineering; KAIST; Daejeon 34141 South Korea

2. Graphene Research Center and School of Electrical Engineering; KAIST; Daejeon 34141 South Korea

3. Center for Nanomaterials and Chemical Reactions; Institute for Basic Science (IBS); Daejeon 34047 South Korea

4. UNIST Central Research Facilities (UCRF) and School of Materials Science and Engineering; UNIST; Ulsan 44919 South Korea

Funder

Ministry of Education

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201502734/fullpdf

Reference36 articles.

1. Nanoionics-based resistive switching memories

2. Resistive switching in transition metal oxides

3. Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

4. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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